Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMNH3010LK3-13
Herstellerteilenummer | DMNH3010LK3-13 |
---|---|
Zukünftige Teilenummer | FT-DMNH3010LK3-13 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
DMNH3010LK3-13 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 15A (Ta), 55A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 18A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 37nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2075pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 2W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252-4L |
Paket / fall | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMNH3010LK3-13 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMNH3010LK3-13-FT |
DMN2009LSS-13
Diodes Incorporated
DMN3007LSS-13
Diodes Incorporated
DMN3007LSSQ-13
Diodes Incorporated
DMN3010LSS-13
Diodes Incorporated
DMN3018SSS-13
Diodes Incorporated
DMN4800LSSL-13
Diodes Incorporated
DMN4800LSSQ-13
Diodes Incorporated
DMP2022LSSQ-13
Diodes Incorporated
DMP2038USS-13
Diodes Incorporated
DMP2066LSS-13
Diodes Incorporated
LCMXO2-640HC-6TG100I
Lattice Semiconductor Corporation
XA3S400A-4FTG256I
Xilinx Inc.
A54SX72A-1FG484M
Microsemi Corporation
A3P250-1FG256
Microsemi Corporation
ICE40UP3K-UWG30ITR1K
Lattice Semiconductor Corporation
EP4SE530H35C4N
Intel
XC4VLX40-11FFG1148I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP1S20F780C7
Intel