Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMTH6004SK3-13
Herstellerteilenummer | DMTH6004SK3-13 |
---|---|
Zukünftige Teilenummer | FT-DMTH6004SK3-13 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
DMTH6004SK3-13 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 100A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 90A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 95.4nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4556pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 3.9W (Ta), 180W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMTH6004SK3-13 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMTH6004SK3-13-FT |
DMN1019USN-13
Diodes Incorporated
DMP2066LSN-7
Diodes Incorporated
DMN100-7-F
Diodes Incorporated
DMN2020LSN-7
Diodes Incorporated
DMN1019USN-7
Diodes Incorporated
DMG3407SSN-7
Diodes Incorporated
DMP2012SN-7
Diodes Incorporated
DMN3033LSN-7
Diodes Incorporated
DMN3033LSNQ-7
Diodes Incorporated
DMN3070SSN-7
Diodes Incorporated
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel