Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Einfach, vorgespann / DTD543XMT2L
Herstellerteilenummer | DTD543XMT2L |
---|---|
Zukünftige Teilenummer | FT-DTD543XMT2L |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DTD543XMT2L Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | NPN - Pre-Biased |
Stromabnehmer (Ic) (max.) | 500mA |
Spannung - Durchschlag Kollektoremitter (max.) | 12V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | 10 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 140 @ 100mA, 2V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 5mA, 100mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 260MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-723 |
Supplier Device Package | VMT3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTD543XMT2L Gewicht | kontaktiere uns |
Ersatzteilnummer | DTD543XMT2L-FT |
RN2104CT(TPL3)
Toshiba Semiconductor and Storage
RN2105CT(TPL3)
Toshiba Semiconductor and Storage
RN2106CT(TPL3)
Toshiba Semiconductor and Storage
RN2107ACT(TPL3)
Toshiba Semiconductor and Storage
RN2107CT(TPL3)
Toshiba Semiconductor and Storage
RN2108ACT(TPL3)
Toshiba Semiconductor and Storage
RN2108CT(TPL3)
Toshiba Semiconductor and Storage
RN2109ACT(TPL3)
Toshiba Semiconductor and Storage
RN2109CT(TPL3)
Toshiba Semiconductor and Storage
RN2110CT(TPL3)
Toshiba Semiconductor and Storage
A42MX36-3BG272
Microsemi Corporation
AFS1500-1FG484I
Microsemi Corporation
EP1K10TC100-2
Intel
XC7V585T-1FFG1761I
Xilinx Inc.
XC7K325T-2FB676I
Xilinx Inc.
APA600-FGG676I
Microsemi Corporation
LFE2M20E-6FN484I
Lattice Semiconductor Corporation
LCMXO256C-4M100C
Lattice Semiconductor Corporation
LCMXO2-4000HE-4MG132I
Lattice Semiconductor Corporation
10AX016E4F29E3SG
Intel