Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Einfach, vorgespann / RN2110CT(TPL3)
Herstellerteilenummer | RN2110CT(TPL3) |
---|---|
Zukünftige Teilenummer | FT-RN2110CT(TPL3) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2110CT(TPL3) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | PNP - Pre-Biased |
Stromabnehmer (Ic) (max.) | 50mA |
Spannung - Durchschlag Kollektoremitter (max.) | 20V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | - |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 300 @ 1mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 150mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | - |
Leistung max | 50mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2110CT(TPL3) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2110CT(TPL3)-FT |
RN2114(TE85L,F)
Toshiba Semiconductor and Storage
RN2115,LF(CT
Toshiba Semiconductor and Storage
RN2116,LF(CT
Toshiba Semiconductor and Storage
RN1102T5LFT
Toshiba Semiconductor and Storage
RN1104T5LFT
Toshiba Semiconductor and Storage
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage
RN1109(T5L,F,T)
Toshiba Semiconductor and Storage
RN1110(T5L,F,T)
Toshiba Semiconductor and Storage
RN1112(T5L,F,T)
Toshiba Semiconductor and Storage
RN1114(T5L,F,T)
Toshiba Semiconductor and Storage
A1425A-PQG100C
Microsemi Corporation
XC3S200-5PQ208C
Xilinx Inc.
APA300-CQ352B
Microsemi Corporation
A54SX08A-PQ208
Microsemi Corporation
A54SX08A-PQ208A
Microsemi Corporation
EP4CGX110DF27C8
Intel
10M04DCF256C7G
Intel
5SGXEA3K2F35I3L
Intel
LFXP3C-3QN208I
Lattice Semiconductor Corporation
LCMXO2280C-4FTN324I
Lattice Semiconductor Corporation