Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMC2DXV5T1G
Herstellerteilenummer | EMC2DXV5T1G |
---|---|
Zukünftige Teilenummer | FT-EMC2DXV5T1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMC2DXV5T1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 22 kOhms |
Widerstand - Emitterbasis (R2) | 22 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 60 @ 5mA, 10V |
Vce-Sättigung (max.) @ Ib, Ic | 250mV @ 300µA, 10mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | - |
Leistung max | 500mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-553 |
Supplier Device Package | SOT-553 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMC2DXV5T1G Gewicht | kontaktiere uns |
Ersatzteilnummer | EMC2DXV5T1G-FT |
NSBC144WDXV6T1G
ON Semiconductor
EMF18XV6T5G
ON Semiconductor
NSBA143EDXV6T1G
ON Semiconductor
NSBC114TDXV6T5G
ON Semiconductor
NSBC114YDXV6T5G
ON Semiconductor
NSBC143ZDXV6T5G
ON Semiconductor
NSVEMD4DXV6T5G
ON Semiconductor
NSBA123EDXV6T1G
ON Semiconductor
NSBC144EPDXV6T1G
ON Semiconductor
NSBA115EDXV6T1G
ON Semiconductor
EPF6010ATC144-1
Intel
LCMXO640C-5T144C
Lattice Semiconductor Corporation
XC3SD3400A-4CS484C
Xilinx Inc.
XC3S200-4FTG256I
Xilinx Inc.
XC2S30-6VQG100C
Xilinx Inc.
A3P1000L-FG256
Microsemi Corporation
A3P125-2PQG208I
Microsemi Corporation
AGLN060V5-VQ100I
Microsemi Corporation
LFXP6E-3F256C
Lattice Semiconductor Corporation
10AX115N3F45I2SG
Intel