Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMD59T2R
Herstellerteilenummer | EMD59T2R |
---|---|
Zukünftige Teilenummer | FT-EMD59T2R |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMD59T2R Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 10 kOhms |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 80 @ 5mA, 10V |
Vce-Sättigung (max.) @ Ib, Ic | 150mV @ 500µA, 5mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD59T2R Gewicht | kontaktiere uns |
Ersatzteilnummer | EMD59T2R-FT |
RN1903,LF(CT
Toshiba Semiconductor and Storage
RN1910,LF(CT
Toshiba Semiconductor and Storage
RN4985,LF(CT
Toshiba Semiconductor and Storage
RN1902T5LFT
Toshiba Semiconductor and Storage
RN1905(T5L,F,T)
Toshiba Semiconductor and Storage
RN1905,LF
Toshiba Semiconductor and Storage
RN1906(T5L,F,T)
Toshiba Semiconductor and Storage
RN1906,LF
Toshiba Semiconductor and Storage
RN1907,LF
Toshiba Semiconductor and Storage
RN1908(T5L,F,T)
Toshiba Semiconductor and Storage
XCKU035-2FBVA676I
Xilinx Inc.
XC6SLX150T-N3FG900C
Xilinx Inc.
5SGXEA9N1F45C2N
Intel
EP4S40G5H40I1
Intel
XC2V1000-4BGG575I
Xilinx Inc.
XC6VLX550T-1FFG1759I
Xilinx Inc.
XC5VLX110-1FFG676C
Xilinx Inc.
LFE2M50SE-7FN484C
Lattice Semiconductor Corporation
10AX115N2F45E1SG
Intel
5AGXMA5G4F31I5N
Intel