Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN1905(T5L,F,T)
Herstellerteilenummer | RN1905(T5L,F,T) |
---|---|
Zukünftige Teilenummer | FT-RN1905(T5L,F,T) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN1905(T5L,F,T) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 NPN - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 2.2 kOhms |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 80 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz |
Leistung max | 200mW |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1905(T5L,F,T) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN1905(T5L,F,T)-FT |
RN4984FE,LF(CT
Toshiba Semiconductor and Storage
RN4986FE,LF(CT
Toshiba Semiconductor and Storage
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
RN4990FE,LF(CT
Toshiba Semiconductor and Storage
RN1901FETE85LF
Toshiba Semiconductor and Storage
RN1909FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2901FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2911FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1906FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1910FE(T5L,F,T)
Toshiba Semiconductor and Storage
XCVU080-2FFVD1517E
Xilinx Inc.
EP4CE55F23C7N
Intel
EP1K50FI256-2
Intel
EP4SGX360FH29C3
Intel
XC5VLX30-3FF324C
Xilinx Inc.
XC7A200T-2FBG484I
Xilinx Inc.
LFX200EB-04F256I
Lattice Semiconductor Corporation
LFE2M35SE-7FN672C
Lattice Semiconductor Corporation
EP4SGX230DF29C4N
Intel
EPF6016AFC100-1
Intel