Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMG4T2R
Herstellerteilenummer | EMG4T2R |
---|---|
Zukünftige Teilenummer | FT-EMG4T2R |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMG4T2R Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 NPN - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 10 kOhms |
Widerstand - Emitterbasis (R2) | - |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 100 @ 1mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 1mA, 10mA |
Strom - Kollektorabschaltung (max.) | - |
Frequenz - Übergang | 250MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package | EMT5 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMG4T2R Gewicht | kontaktiere uns |
Ersatzteilnummer | EMG4T2R-FT |
RN4906,LF
Toshiba Semiconductor and Storage
RN4907(T5L,F,T)
Toshiba Semiconductor and Storage
RN4908(T5L,F,T)
Toshiba Semiconductor and Storage
RN4909(T5L,F,T)
Toshiba Semiconductor and Storage
RN4910(T5L,F,T)
Toshiba Semiconductor and Storage
RN4911(T5L,F,T)
Toshiba Semiconductor and Storage
RN4984(T5L,F,T)
Toshiba Semiconductor and Storage
RN4986(T5L,F,T)
Toshiba Semiconductor and Storage
RN4988(T5L,F,T)
Toshiba Semiconductor and Storage
RN4989(T5L,F,T)
Toshiba Semiconductor and Storage
XCVU080-2FFVD1517E
Xilinx Inc.
EP4CE55F23C7N
Intel
EP1K50FI256-2
Intel
EP4SGX360FH29C3
Intel
XC5VLX30-3FF324C
Xilinx Inc.
XC7A200T-2FBG484I
Xilinx Inc.
LFX200EB-04F256I
Lattice Semiconductor Corporation
LFE2M35SE-7FN672C
Lattice Semiconductor Corporation
EP4SGX230DF29C4N
Intel
EPF6016AFC100-1
Intel