Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN4910(T5L,F,T)
Herstellerteilenummer | RN4910(T5L,F,T) |
---|---|
Zukünftige Teilenummer | FT-RN4910(T5L,F,T) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN4910(T5L,F,T) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | - |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 120 @ 1mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 200mW |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN4910(T5L,F,T) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN4910(T5L,F,T)-FT |
RN2969FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2970FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2971FE(TE85L,F)
Toshiba Semiconductor and Storage
RN4902FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1702JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1704JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2709JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2711JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2712JE(TE85L,F)
Toshiba Semiconductor and Storage
EP20K30ETC144-3N
Intel
XC3S1500-5FG320C
Xilinx Inc.
XC4VFX100-11FFG1517I
Xilinx Inc.
A42MX36-3PQ208
Microsemi Corporation
10M40DCF256I7G
Intel
EP4CE22F17C9LN
Intel
5SGSMD5H3F35I3N
Intel
XC7VX415T-2FFG1927C
Xilinx Inc.
LFX200EB-03F256I
Lattice Semiconductor Corporation
EP2AGX125EF35C6N
Intel