Herstellerteilenummer | EPC2102 |
---|---|
Zukünftige Teilenummer | FT-EPC2102 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | eGaN® |
EPC2102 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Half Bridge) |
FET-Funktion | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 23A |
Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 20A, 5V |
Vgs (th) (Max) @ Id | 2.5V @ 7mA |
Gateladung (Qg) (Max) @ Vgs | 6.8nC @ 5V |
Eingangskapazität (Ciss) (Max) @ Vds | 830pF @ 30V |
Leistung max | - |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | Die |
Supplier Device Package | Die |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2102 Gewicht | kontaktiere uns |
Ersatzteilnummer | EPC2102-FT |
IPG20N04S412ATMA1
Infineon Technologies
IPG20N04S4L07ATMA1
Infineon Technologies
IPG20N04S4L08ATMA1
Infineon Technologies
IPG20N06S2L50ATMA1
Infineon Technologies
IPG20N06S3L-23
Infineon Technologies
IPG20N06S3L-35
Infineon Technologies
IPG20N06S415ATMA1
Infineon Technologies
IPG20N06S415ATMA2
Infineon Technologies
IPG20N06S4L11ATMA1
Infineon Technologies
IPG20N06S4L14ATMA1
Infineon Technologies
LCMXO640C-4TN100C
Lattice Semiconductor Corporation
XC7A100T-3FTG256E
Xilinx Inc.
M1AFS1500-2FG484
Microsemi Corporation
APA1000-PQG208A
Microsemi Corporation
5SGXEA5N1F40C2L
Intel
EP4S100G3F45I2
Intel
LFEC33E-4F484I
Lattice Semiconductor Corporation
LCMXO2-4000ZE-2FTG256I
Lattice Semiconductor Corporation
LCMXO2-2000ZE-2MG132I
Lattice Semiconductor Corporation
10AX066N3F40I2SG
Intel