Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / EPC2107ENGRT
Herstellerteilenummer | EPC2107ENGRT |
---|---|
Zukünftige Teilenummer | FT-EPC2107ENGRT |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | eGaN® |
EPC2107ENGRT Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET-Funktion | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.7A, 500mA |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Vgs (th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
Gateladung (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
Eingangskapazität (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
Leistung max | - |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 9-VFBGA |
Supplier Device Package | 9-BGA (1.35x1.35) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2107ENGRT Gewicht | kontaktiere uns |
Ersatzteilnummer | EPC2107ENGRT-FT |
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