Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDB86566-F085
Herstellerteilenummer | FDB86566-F085 |
---|---|
Zukünftige Teilenummer | FT-FDB86566-F085 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, PowerTrench® |
FDB86566-F085 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 110A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 80A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 6655pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 176W (Tj) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDB86566-F085 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDB86566-F085-FT |
FDB0165N807L
ON Semiconductor
FDB016N04AL7
ON Semiconductor
FDB0190N807L
ON Semiconductor
FDB0105N407L
ON Semiconductor
FDB0170N607L
ON Semiconductor
FDB024N04AL7
ON Semiconductor
FDB0690N1507L
ON Semiconductor
FDB0630N1507L
ON Semiconductor
FDB0260N1007L
ON Semiconductor
FDB8832
ON Semiconductor
LCMXO2-640HC-6TG100I
Lattice Semiconductor Corporation
XA3S400A-4FTG256I
Xilinx Inc.
A54SX72A-1FG484M
Microsemi Corporation
A3P250-1FG256
Microsemi Corporation
ICE40UP3K-UWG30ITR1K
Lattice Semiconductor Corporation
EP4SE530H35C4N
Intel
XC4VLX40-11FFG1148I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP1S20F780C7
Intel