Herstellerteilenummer | FDD306P |
---|---|
Zukünftige Teilenummer | FT-FDD306P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDD306P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6.7A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 6.7A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 21nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 1290pF @ 6V |
FET-Funktion | - |
Verlustleistung (max.) | 52W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDD306P Gewicht | kontaktiere uns |
Ersatzteilnummer | FDD306P-FT |
FQD10N20CTM
ON Semiconductor
FQD5P20TM
ON Semiconductor
IRLR024NTRPBF
Infineon Technologies
IRFR3806TRPBF
Infineon Technologies
IRLR2908TRLPBF
Infineon Technologies
FDD4685
ON Semiconductor
FDD5N60NZTM
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FDD7N60NZTM
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FDD9411L-F085
ON Semiconductor
FQD1N80TM
ON Semiconductor
XC3S1600E-5FGG320C
Xilinx Inc.
XC3S250E-4VQ100I
Xilinx Inc.
M1AGL600V5-FG484I
Microsemi Corporation
LCMXO3LF-6900C-6BG400C
Lattice Semiconductor Corporation
EP4CGX50CF23C7
Intel
5SGXEA3K1F40C2L
Intel
5SGXMA3K2F40C2LN
Intel
5SGXEB6R3F43C2LN
Intel
XC6VLX195T-3FFG784C
Xilinx Inc.
5CGXFC4C7U19C8N
Intel