Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB17N08TM
Herstellerteilenummer | FQB17N08TM |
---|---|
Zukünftige Teilenummer | FT-FQB17N08TM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQB17N08TM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 16.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 8.25A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 450pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.13W (Ta), 65W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB17N08TM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB17N08TM-FT |
FDB035N10A
ON Semiconductor
FQB25N33TM-F085
ON Semiconductor
HUF75639S3ST
ON Semiconductor
FQB44N10TM
ON Semiconductor
FQB50N06LTM
ON Semiconductor
FQB11N40CTM
ON Semiconductor
FQB6N80TM
ON Semiconductor
FDB045AN08A0-F085
ON Semiconductor
FDB14N30TM
ON Semiconductor
FDB16AN08A0
ON Semiconductor
LFXP6E-4T144I
Lattice Semiconductor Corporation
XC6SLX16-N3FTG256C
Xilinx Inc.
AGLE3000V5-FG484
Microsemi Corporation
M1A3P250-1PQG208I
Microsemi Corporation
EP3C80F484C7N
Intel
10M50SCE144C8G
Intel
LCMXO2-7000HC-4BG256I
Lattice Semiconductor Corporation
EP1S80F1508C6
Intel
EPF8282ALC84-4
Intel
EPF10K130EQC240-3N
Intel