Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB24N08TM
Herstellerteilenummer | FQB24N08TM |
---|---|
Zukünftige Teilenummer | FT-FQB24N08TM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQB24N08TM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 24A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 12A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 750pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.75W (Ta), 75W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB24N08TM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB24N08TM-FT |
FDB16AN08A0
ON Semiconductor
FDB20N50F
ON Semiconductor
FDB28N30TM
ON Semiconductor
FDB3632-F085
ON Semiconductor
FDB86563-F085
ON Semiconductor
FDB8896
ON Semiconductor
FQB27N25TM-F085
ON Semiconductor
FQB33N10LTM
ON Semiconductor
FQB33N10TM
ON Semiconductor
FQB34N20LTM
ON Semiconductor
XC3S200A-4FT256I
Xilinx Inc.
XC3S2000-4FG456C
Xilinx Inc.
A42MX09-VQ100I
Microsemi Corporation
AGL030V5-VQ100I
Microsemi Corporation
EP2C50F672I8
Intel
XC6SLX4-2CSG225I
Xilinx Inc.
AGL600V2-CSG281
Microsemi Corporation
LFXP6C-3Q208C
Lattice Semiconductor Corporation
LFXP2-40E-6F484I
Lattice Semiconductor Corporation
EP3SL50F780C4
Intel