Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB34N20TM-AM002
Herstellerteilenummer | FQB34N20TM-AM002 |
---|---|
Zukünftige Teilenummer | FT-FQB34N20TM-AM002 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQB34N20TM-AM002 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 31A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 15.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 78nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 3100pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.13W (Ta), 180W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB34N20TM-AM002 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB34N20TM-AM002-FT |
FQB5N90TM
ON Semiconductor
HUFA75645S3S
ON Semiconductor
FDB047N10
ON Semiconductor
FQB22P10TM
ON Semiconductor
FQB55N10TM
ON Semiconductor
FDB13AN06A0
ON Semiconductor
FDB2614
ON Semiconductor
FDB8447L
ON Semiconductor
FQB12P20TM
ON Semiconductor
FQB19N20TM
ON Semiconductor
LFXP3C-4T144I
Lattice Semiconductor Corporation
A54SX16-VQ100
Microsemi Corporation
EP4CE40F23C6N
Intel
10AX016C4U19I3SG
Intel
5SGSED6K2F40C2N
Intel
5CGXFC7B6M15I7N
Intel
EP4SGX530KH40C3NES
Intel
5SGXEA5K1F35I2N
Intel
XC6VLX365T-1FF1156I
Xilinx Inc.
LCMXO2-7000HE-6BG332C
Lattice Semiconductor Corporation