Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQD8P10TF_NB82052
Herstellerteilenummer | FQD8P10TF_NB82052 |
---|---|
Zukünftige Teilenummer | FT-FQD8P10TF_NB82052 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQD8P10TF_NB82052 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6.6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 530 mOhm @ 3.3A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 470pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 44W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-Pak |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQD8P10TF_NB82052 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQD8P10TF_NB82052-FT |
FQD1N60CTF
ON Semiconductor
FQD1N60TF
ON Semiconductor
FQD1N60TM
ON Semiconductor
FQD1N80TF
ON Semiconductor
FQD1P50TF
ON Semiconductor
FQD1P50TM
ON Semiconductor
FQD20N06LETM
ON Semiconductor
FQD20N06LTF
ON Semiconductor
FQD20N06LTM
ON Semiconductor
FQD20N06TF
ON Semiconductor
AT6010ALV-4AC
Microchip Technology
EX64-TQ100I
Microsemi Corporation
XC4005XL-3VQ100I
Xilinx Inc.
M1A3P600L-1FGG484I
Microsemi Corporation
LFE5UM-85F-7BG756I
Lattice Semiconductor Corporation
EP20K200EFC484-2XN
Intel
5SGXEA5K3F40I3LN
Intel
EP4CE6E22C8N
Intel
LFEC6E-5F484C
Lattice Semiconductor Corporation
5SGXEA3H2F35I3LN
Intel