Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQD1N60TM
Herstellerteilenummer | FQD1N60TM |
---|---|
Zukünftige Teilenummer | FT-FQD1N60TM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQD1N60TM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 500mA, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 150pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 30W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-Pak |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQD1N60TM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQD1N60TM-FT |
FCD4N60TF
ON Semiconductor
FCD4N60TM_WS
ON Semiconductor
FCD5N60TF
ON Semiconductor
FCD7N60TF
ON Semiconductor
FDD044AN03L
ON Semiconductor
FDD068AN03L
ON Semiconductor
FDD107AN06LA0
ON Semiconductor
FDD14AN06LA0
ON Semiconductor
FDD16AN08A0-F085
ON Semiconductor
FDD16AN08A0_NF054
ON Semiconductor
XC4052XL-2HQ304I
Xilinx Inc.
EP3SL200F1517I4
Intel
XC2V1000-5BGG575I
Xilinx Inc.
LFXP6E-4FN256I
Lattice Semiconductor Corporation
LFXP2-17E-6QN208C
Lattice Semiconductor Corporation
LCMXO3LF-1300E-5MG121C
Lattice Semiconductor Corporation
10AX016E4F29E3SG
Intel
EP3C120F780I7
Intel
EPF8452AQC160-3
Intel
5SGSMD3H2F35C1N
Intel