Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQI11P06TU
Herstellerteilenummer | FQI11P06TU |
---|---|
Zukünftige Teilenummer | FT-FQI11P06TU |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQI11P06TU Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 17nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 550pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.13W (Ta), 53W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQI11P06TU Gewicht | kontaktiere uns |
Ersatzteilnummer | FQI11P06TU-FT |
BSS606NH6327XTSA1
Infineon Technologies
BSS192PE6327
Infineon Technologies
BSS192PE6327T
Infineon Technologies
BSS192PH6327XTSA1
Infineon Technologies
BSS192PL6327HTSA1
Infineon Technologies
BSS225
Infineon Technologies
BSS225H6327XTSA1
Infineon Technologies
BSS225L6327HTSA1
Infineon Technologies
BSS87 E6433
Infineon Technologies
BSS87E6327
Infineon Technologies
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel