Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQI32N12V2TU
Herstellerteilenummer | FQI32N12V2TU |
---|---|
Zukünftige Teilenummer | FT-FQI32N12V2TU |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQI32N12V2TU Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 120V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 32A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 16A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 53nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1860pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.75W (Ta), 150W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQI32N12V2TU Gewicht | kontaktiere uns |
Ersatzteilnummer | FQI32N12V2TU-FT |
IRF40H210
Infineon Technologies
IRFH5004TR2PBF
Infineon Technologies
IRFH5010TR2PBF
Infineon Technologies
IRFH5010TRPBF
Infineon Technologies
IRFH5015TR2PBF
Infineon Technologies
IRFH5025TR2PBF
Infineon Technologies
IRFH5025TRPBF
Infineon Technologies
IRFH5106TR2PBF
Infineon Technologies
IRFH5106TRPBF
Infineon Technologies
IRFH5110TR2PBF
Infineon Technologies
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel