Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQP11P06
Herstellerteilenummer | FQP11P06 |
---|---|
Zukünftige Teilenummer | FT-FQP11P06 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP11P06 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 17nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 550pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 53W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP11P06 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP11P06-FT |
HUF75545P3
ON Semiconductor
FQP4N20L
ON Semiconductor
FDP61N20
ON Semiconductor
FDP8880
ON Semiconductor
FDP15N40
ON Semiconductor
FQP27P06
ON Semiconductor
FQP30N06L
ON Semiconductor
FQP2N60C
ON Semiconductor
FQP3P50
ON Semiconductor
FDP20N50
ON Semiconductor
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel