Herstellerteilenummer | FQP2N80 |
---|---|
Zukünftige Teilenummer | FT-FQP2N80 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP2N80 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 800V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.3 Ohm @ 1.2A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 550pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 85W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP2N80 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP2N80-FT |
FDP150N10A-F102
ON Semiconductor
FDP3682
ON Semiconductor
FQP13N50
ON Semiconductor
FQP6N80C
ON Semiconductor
FQP70N10
ON Semiconductor
IRL640A
ON Semiconductor
BUZ11_R4941
ON Semiconductor
FCP099N60E
ON Semiconductor
FCP104N60
ON Semiconductor
FCP104N60F
ON Semiconductor
ICE40UP5K-SG48I
Lattice Semiconductor Corporation
XC3S250E-5PQ208C
Xilinx Inc.
XC2V1000-5FGG456I
Xilinx Inc.
10CL010ZU256I8G
Intel
5SGXMA7K2F40I3
Intel
A54SX32A-1TQ100I
Microsemi Corporation
APA075-FGG144
Microsemi Corporation
10AX066N2F40I2SGES
Intel
EPF10K50VBC356-2N
Intel
EPF10K50VBI356-4
Intel