Herstellerteilenummer | FQP2P40 |
---|---|
Zukünftige Teilenummer | FT-FQP2P40 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP2P40 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 400V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.5 Ohm @ 1A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 13nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 350pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 63W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP2P40 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP2P40-FT |
FQP6N80C
ON Semiconductor
FQP70N10
ON Semiconductor
IRL640A
ON Semiconductor
BUZ11_R4941
ON Semiconductor
FCP099N60E
ON Semiconductor
FCP104N60
ON Semiconductor
FCP104N60F
ON Semiconductor
FCP11N60
ON Semiconductor
FCP125N60E
ON Semiconductor
FCP170N60
ON Semiconductor
LCMXO2-640HC-6TG100I
Lattice Semiconductor Corporation
XA3S400A-4FTG256I
Xilinx Inc.
A54SX72A-1FG484M
Microsemi Corporation
A3P250-1FG256
Microsemi Corporation
ICE40UP3K-UWG30ITR1K
Lattice Semiconductor Corporation
EP4SE530H35C4N
Intel
XC4VLX40-11FFG1148I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP1S20F780C7
Intel