Herstellerteilenummer | FQP3N60 |
---|---|
Zukünftige Teilenummer | FT-FQP3N60 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP3N60 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 13nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 450pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 75W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP3N60 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP3N60-FT |
FCP11N60
ON Semiconductor
FCP125N60E
ON Semiconductor
FCP170N60
ON Semiconductor
FCP190N60-GF102
ON Semiconductor
FCP20N60_F080
ON Semiconductor
FCP20N60_G
ON Semiconductor
FCP220N80
ON Semiconductor
FCP25N60N
ON Semiconductor
FCP260N60E
ON Semiconductor
FCP380N60E
ON Semiconductor