Herstellerteilenummer | FQP4N90 |
---|---|
Zukünftige Teilenummer | FT-FQP4N90 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP4N90 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 900V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.2A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.3 Ohm @ 2.1A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1100pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 140W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP4N90 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP4N90-FT |
FCP850N80Z
ON Semiconductor
FDP027N08B
ON Semiconductor
FDP032N08B-F102
ON Semiconductor
FDP039N08B-F102
ON Semiconductor
FDP040N06
ON Semiconductor
FDP045N10A
ON Semiconductor
FDP053N08B-F102
ON Semiconductor
FDP070AN06A0
ON Semiconductor
FDP075N15A
ON Semiconductor
FDP083N15A
ON Semiconductor
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel