Herstellerteilenummer | FQP5P10 |
---|---|
Zukünftige Teilenummer | FT-FQP5P10 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP5P10 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 2.25A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 8.2nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 250pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 40W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP5P10 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP5P10-FT |
FDP10AN06A0
ON Semiconductor
FDP120AN15A0
ON Semiconductor
FDP13AN06A0
ON Semiconductor
FDP14AN06LA0
ON Semiconductor
FDP150N10A
ON Semiconductor
FDP15N50
ON Semiconductor
FDP15N65
ON Semiconductor
FDP16AN08A0
ON Semiconductor
FDP16N50
ON Semiconductor
FDP20AN06A0
ON Semiconductor
A1020B-2VQ80I
Microsemi Corporation
XC7A50T-3FGG484E
Xilinx Inc.
5SGXMB6R2F40I2N
Intel
5SGSMD3E3H29C2N
Intel
EP2AGX125DF25I3N
Intel
XC5VLX110-3FFG1760C
Xilinx Inc.
LCMXO2-7000ZE-1FTG256C
Lattice Semiconductor Corporation
LCMXO2-4000HE-6MG132C
Lattice Semiconductor Corporation
5AGXBA7D4F31I5N
Intel
EP4SGX230HF35I4N
Intel