Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQP85N06
Herstellerteilenummer | FQP85N06 |
---|---|
Zukünftige Teilenummer | FT-FQP85N06 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP85N06 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 85A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 42.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 112nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 4120pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 160W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP85N06 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP85N06-FT |
FDP020N06B-F102
ON Semiconductor
FQP8P10
ON Semiconductor
FDP8030L
ON Semiconductor
FQP6N60C
ON Semiconductor
FDP8874
ON Semiconductor
FCP600N60Z
ON Semiconductor
FQP9N30
ON Semiconductor
FDP20N50F
ON Semiconductor
HUF75545P3
ON Semiconductor
FQP4N20L
ON Semiconductor
A3PN015-1QNG68I
Microsemi Corporation
A1415A-PQ100I
Microsemi Corporation
M2GL025S-1VF400I
Microsemi Corporation
A10V20B-PL68C
Microsemi Corporation
EP4S100G3F45I3N
Intel
XC4028XL-09HQ208C
Xilinx Inc.
XC2VP2-6FFG672C
Xilinx Inc.
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP3SE80F780C4
Intel
EPF10K30AQC208-1N
Intel