Herstellerteilenummer | FQP9N30 |
---|---|
Zukünftige Teilenummer | FT-FQP9N30 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP9N30 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 300V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 4.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 750pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 98W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP9N30 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP9N30-FT |
FQPF44N10
ON Semiconductor
FQPF46N15
ON Semiconductor
FQPF4N20
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FQPF4N20L
ON Semiconductor
FQPF4N25
ON Semiconductor
FQPF4N50
ON Semiconductor
FQPF4N60
ON Semiconductor
FQPF4N80
ON Semiconductor
FQPF4N90
ON Semiconductor
FQPF4N90CT
ON Semiconductor
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel