Herstellerteilenummer | FQP9N30 |
---|---|
Zukünftige Teilenummer | FT-FQP9N30 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP9N30 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 300V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 4.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 750pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 98W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP9N30 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP9N30-FT |
FQPF44N10
ON Semiconductor
FQPF46N15
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FQPF4N20
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FQPF4N20L
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FQPF4N25
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FQPF4N50
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FQPF4N90
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FQPF4N90CT
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A3P030-2QNG68I
Microsemi Corporation
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A3P250L-VQG100I
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EP3CLS100F484C7
Intel
EP2AGX125DF25C4N
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EP2AGX65DF25C5
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5CEBA5U19C8N
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EP1C20F324I7N
Intel