Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQPF85N06
Herstellerteilenummer | FQPF85N06 |
---|---|
Zukünftige Teilenummer | FT-FQPF85N06 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQPF85N06 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 53A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 26.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 112nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 4120pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 62W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220F |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQPF85N06 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQPF85N06-FT |
GP1M008A025HG
Global Power Technologies Group
GP1M008A050HG
Global Power Technologies Group
GP1M008A080H
Global Power Technologies Group
GP1M009A020HG
Global Power Technologies Group
GP1M009A050HS
Global Power Technologies Group
GP1M009A060H
Global Power Technologies Group
GP1M009A090H
Global Power Technologies Group
GP1M010A060H
Global Power Technologies Group
GP1M010A080H
Global Power Technologies Group
GP1M011A050H
Global Power Technologies Group
EX64-TQ100I
Microsemi Corporation
M2GL090T-FCSG325I
Microsemi Corporation
M1AFS600-2FG256I
Microsemi Corporation
5SGXMA7N2F40I3N
Intel
XCS05-3PC84C
Xilinx Inc.
XC2V4000-5FFG1152I
Xilinx Inc.
AGL600V5-FGG144
Microsemi Corporation
EP3SL150F780C4LN
Intel
EPF10K30RC240-4N
Intel
EP1S60F1020C5N
Intel