Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / GP1M016A025CG
Herstellerteilenummer | GP1M016A025CG |
---|---|
Zukünftige Teilenummer | FT-GP1M016A025CG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
GP1M016A025CG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 250V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 16A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 8A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 19nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 944pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 93.9W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-Pak |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
GP1M016A025CG Gewicht | kontaktiere uns |
Ersatzteilnummer | GP1M016A025CG-FT |
FQD2N50TM
ON Semiconductor
FQD2N60CTF
ON Semiconductor
FQD2N60CTF_F080
ON Semiconductor
FQD2N60TF
ON Semiconductor
FQD2N60TM
ON Semiconductor
FQD2N80TF
ON Semiconductor
FQD2N80TM_WS
ON Semiconductor
FQD2N90TF
ON Semiconductor
FQD2P40TF
ON Semiconductor
FQD2P40TF_F080
ON Semiconductor
LCMXO1200E-5T144C
Lattice Semiconductor Corporation
A1020B-2PQ100C
Microsemi Corporation
XC6SLX9-2FT256I
Xilinx Inc.
A3PN125-1VQ100
Microsemi Corporation
EP2A15F672C7AA
Intel
EP3CLS70U484I7
Intel
5SGSED6K2F40C3N
Intel
EP4CE10E22C9L
Intel
LFE3-70E-8FN484I
Lattice Semiconductor Corporation
EP20K600EBC652-1X
Intel