Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / HAT2299WP-EL-E
Herstellerteilenummer | HAT2299WP-EL-E |
---|---|
Zukünftige Teilenummer | FT-HAT2299WP-EL-E |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
HAT2299WP-EL-E Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 150V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 14A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 7A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 710pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 25W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-WPAK |
Paket / fall | 8-PowerWDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HAT2299WP-EL-E Gewicht | kontaktiere uns |
Ersatzteilnummer | HAT2299WP-EL-E-FT |
NP60N055MUK-S18-AY
Renesas Electronics America
NP80N055MHE-S18-AY
Renesas Electronics America
NP80N06MLG-S18-AY
Renesas Electronics America
NP88N075MUE-S18-AY
Renesas Electronics America
NP89N055MUK-S18-AY
Renesas Electronics America
NP90N04MUG-S18-AY
Renesas Electronics America
RJK0601DPN-E0#T2
Renesas Electronics America
RJK0602DPN-E0#T2
Renesas Electronics America
RJK0603DPN-E0#T2
Renesas Electronics America
RJK0703DPN-E0#T2
Renesas Electronics America
M2GL025T-1VFG256I
Microsemi Corporation
EPF10K10ATC100-1
Intel
EPF10K130EFC484-1N
Intel
5SGSED6K2F40I3L
Intel
5SGSMD8K2F40I2LN
Intel
5SGXEA3K3F35C2N
Intel
XC6VLX240T-L1FFG1759I
Xilinx Inc.
XC4VLX60-12FFG1148C
Xilinx Inc.
XC5VLX30-1FFG676C
Xilinx Inc.
EP20K100FI324-2XV
Intel