Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NP80N055MHE-S18-AY
Herstellerteilenummer | NP80N055MHE-S18-AY |
---|---|
Zukünftige Teilenummer | FT-NP80N055MHE-S18-AY |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NP80N055MHE-S18-AY Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 55V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 80A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 40A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 60nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 3600pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.8W (Ta), 120W (Tc) |
Betriebstemperatur | 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NP80N055MHE-S18-AY Gewicht | kontaktiere uns |
Ersatzteilnummer | NP80N055MHE-S18-AY-FT |
RCD075N19TL
Rohm Semiconductor
RCD075N20TL
Rohm Semiconductor
RCD100N19TL
Rohm Semiconductor
RCD100N20TL
Rohm Semiconductor
RDD020N60TL
Rohm Semiconductor
RDD022N50TL
Rohm Semiconductor
RDD022N60TL
Rohm Semiconductor
RDD023N50TL
Rohm Semiconductor
RDD050N20TL
Rohm Semiconductor
RK3055ETL
Rohm Semiconductor
A3P030-2QNG68I
Microsemi Corporation
A1425A-1PQ100I
Microsemi Corporation
XC4052XL-09HQ304C
Xilinx Inc.
A3P125-2PQ208I
Microsemi Corporation
A3P250L-VQG100I
Microsemi Corporation
EP3CLS100F484C7
Intel
EP2AGX125DF25C4N
Intel
EP2AGX65DF25C5
Intel
5CEBA5U19C8N
Intel
EP1C20F324I7N
Intel