Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - IGBTs - Single / HGT1S7N60A4DS
Herstellerteilenummer | HGT1S7N60A4DS |
---|---|
Zukünftige Teilenummer | FT-HGT1S7N60A4DS |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
HGT1S7N60A4DS Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
IGBT-Typ | - |
Spannung - Durchschlag Kollektoremitter (max.) | 600V |
Stromabnehmer (Ic) (max.) | 34A |
Strom - Kollektor gepulst (Icm) | 56A |
Vce (ein) (max.) @ Vge, Ic | 2.7V @ 15V, 7A |
Leistung max | 125W |
Energie wechseln | 55µJ (on), 60µJ (off) |
Eingabetyp | Standard |
Gate Charge | 37nC |
Td (ein / aus) bei 25 ° C | 11ns/100ns |
Testbedingung | 390V, 7A, 25 Ohm, 15V |
Reverse Recovery Time (trr) | 34ns |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HGT1S7N60A4DS Gewicht | kontaktiere uns |
Ersatzteilnummer | HGT1S7N60A4DS-FT |
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