Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - RF / HSMS-281E-TR1G
Herstellerteilenummer | HSMS-281E-TR1G |
---|---|
Zukünftige Teilenummer | FT-HSMS-281E-TR1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
HSMS-281E-TR1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Diodentyp | Schottky - 1 Pair Common Anode |
Spannung - Peak Reverse (Max) | 20V |
Strom - max | 1A |
Kapazität @ Vr, F | 1.2pF @ 0V, 1MHz |
Widerstand @ If, F | 15 Ohm @ 5mA, 1MHz |
Verlustleistung (max.) | - |
Betriebstemperatur | 150°C (TJ) |
Paket / fall | SC-70, SOT-323 |
Supplier Device Package | SOT-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HSMS-281E-TR1G Gewicht | kontaktiere uns |
Ersatzteilnummer | HSMS-281E-TR1G-FT |
ZMS2811TC
Diodes Incorporated
1N5711W-7-F
Diodes Incorporated
1N5711W-13
Diodes Incorporated
1N5711W-7
Diodes Incorporated
CPINUC5206-HF
Comchip Technology
HSMS-282B-BLKG
Broadcom Limited
ASML-5822-BLKG
Broadcom Limited
ASML-5822-TR1G
Broadcom Limited
ASML-5822-TR2G
Broadcom Limited
ASML-5829-BLKG
Broadcom Limited
XC2S200E-6PQ208C
Xilinx Inc.
XC4013E-3PQ208C
Xilinx Inc.
M2GL025S-1FGG484I
Microsemi Corporation
A54SX16A-1FG256M
Microsemi Corporation
AX250-2FG256
Microsemi Corporation
EP4SGX360NF45I4
Intel
5SGXEBBR2H43C2N
Intel
AGL600V2-FGG144T
Microsemi Corporation
EP2AGX260EF29C6N
Intel
10CX220YF780E6G
Intel