Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPD25N06S4L30ATMA1
Herstellerteilenummer | IPD25N06S4L30ATMA1 |
---|---|
Zukünftige Teilenummer | FT-IPD25N06S4L30ATMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPD25N06S4L30ATMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 25A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 8µA |
Gateladung (Qg) (Max) @ Vgs | 16.3nC @ 10V |
Vgs (Max) | ±16V |
Eingangskapazität (Ciss) (Max) @ Vds | 1220pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 29W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3-11 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD25N06S4L30ATMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPD25N06S4L30ATMA1-FT |
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