Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPD30N06S2-15
Herstellerteilenummer | IPD30N06S2-15 |
---|---|
Zukünftige Teilenummer | FT-IPD30N06S2-15 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPD30N06S2-15 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 55V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 30A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 14.7 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 4V @ 80µA |
Gateladung (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1485pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 136W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD30N06S2-15 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPD30N06S2-15-FT |
IPD25CN10NGATMA1
Infineon Technologies
IPD30N03S4L14ATMA1
Infineon Technologies
IPD30N06S4L23ATMA2
Infineon Technologies
IPD35N10S3L26ATMA1
Infineon Technologies
IPD50N06S4L12ATMA2
Infineon Technologies
IPD60R1K5CEAUMA1
Infineon Technologies
IPD60R3K3C6ATMA1
Infineon Technologies
IPD60R600E6
Infineon Technologies
IPD65R250E6XTMA1
Infineon Technologies
IPD78CN10NGATMA1
Infineon Technologies
LFEC3E-4T144C
Lattice Semiconductor Corporation
A42MX24-3PQ208
Microsemi Corporation
5SGXMA9N3F45I3N
Intel
XCS40-4BG256C
Xilinx Inc.
XC6SLX16-3CSG324C
Xilinx Inc.
APA750-FGG676I
Microsemi Corporation
LFXP2-8E-6FTN256I
Lattice Semiconductor Corporation
LFX125EB-03F256I
Lattice Semiconductor Corporation
LFEC33E-3FN484C
Lattice Semiconductor Corporation
5CGXFC3B7U15C8N
Intel