Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPD60R650CEBTMA1
Herstellerteilenummer | IPD60R650CEBTMA1 |
---|---|
Zukünftige Teilenummer | FT-IPD60R650CEBTMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ CE |
IPD60R650CEBTMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 7A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.4A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 200µA |
Gateladung (Qg) (Max) @ Vgs | 20.5nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 440pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 82W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD60R650CEBTMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPD60R650CEBTMA1-FT |
IPD22N08S2L50ATMA1
Infineon Technologies
IPD230N06NGBTMA1
Infineon Technologies
IPD250N06N3GBTMA1
Infineon Technologies
IPD25CN10NGBUMA1
Infineon Technologies
IPD25CNE8N G
Infineon Technologies
IPD25N06S240ATMA1
Infineon Technologies
IPD25N06S240ATMA2
Infineon Technologies
IPD25N06S4L30ATMA1
Infineon Technologies
IPD26N06S2L35ATMA1
Infineon Technologies
IPD26N06S2L35ATMA2
Infineon Technologies
XC3S1600E-5FGG320C
Xilinx Inc.
XC3S250E-4VQ100I
Xilinx Inc.
M1AGL600V5-FG484I
Microsemi Corporation
LCMXO3LF-6900C-6BG400C
Lattice Semiconductor Corporation
EP4CGX50CF23C7
Intel
5SGXEA3K1F40C2L
Intel
5SGXMA3K2F40C2LN
Intel
5SGXEB6R3F43C2LN
Intel
XC6VLX195T-3FFG784C
Xilinx Inc.
5CGXFC4C7U19C8N
Intel