Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPD65R660CFDATMA1
Herstellerteilenummer | IPD65R660CFDATMA1 |
---|---|
Zukünftige Teilenummer | FT-IPD65R660CFDATMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ |
IPD65R660CFDATMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 660 mOhm @ 2.1A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 200µA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 615pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 62.5W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD65R660CFDATMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPD65R660CFDATMA1-FT |
IPD50N03S207ATMA1
Infineon Technologies
IPD50N03S2L06ATMA1
Infineon Technologies
IPD50N03S4L06ATMA1
Infineon Technologies
IPD50N04S308ATMA1
Infineon Technologies
IPD50N04S309ATMA1
Infineon Technologies
IPD50N06S214ATMA1
Infineon Technologies
IPD50N06S214ATMA2
Infineon Technologies
IPD50N06S2L13ATMA1
Infineon Technologies
IPD50N06S2L13ATMA2
Infineon Technologies
IPD50N06S409ATMA1
Infineon Technologies
LCMXO2-1200ZE-2TG144I
Lattice Semiconductor Corporation
XC3S1400AN-4FGG484C
Xilinx Inc.
10M08DCF484C8G
Intel
5SGXMB5R3F43C3N
Intel
5SGXMA7H3F35I3
Intel
LCMXO2280E-3B256C
Lattice Semiconductor Corporation
LCMXO2-4000ZE-1FTG256C
Lattice Semiconductor Corporation
5AGTFC7H3F35I3G
Intel
EP1C4F400C8
Intel
EP20K200EBC356-1
Intel