Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPDH5N03LA G
Herstellerteilenummer | IPDH5N03LA G |
---|---|
Zukünftige Teilenummer | FT-IPDH5N03LA G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPDH5N03LA G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 50A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 50A, 10V |
Vgs (th) (Max) @ Id | 2V @ 35µA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2653pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 83W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPDH5N03LA G Gewicht | kontaktiere uns |
Ersatzteilnummer | IPDH5N03LA G-FT |
IPD600N25N3GATMA1
Infineon Technologies
IPD600N25N3GBTMA1
Infineon Technologies
IPD60R170CFD7ATMA1
Infineon Technologies
IPD60R180C7ATMA1
Infineon Technologies
IPD60R1K4C6
Infineon Technologies
IPD60R1K4C6ATMA1
Infineon Technologies
IPD60R280CFD7ATMA1
Infineon Technologies
IPD60R2K0C6BTMA1
Infineon Technologies
IPD60R2K1CEAUMA1
Infineon Technologies
IPD60R380C6
Infineon Technologies
LFXP3C-4T144I
Lattice Semiconductor Corporation
A54SX16-VQ100
Microsemi Corporation
EP4CE40F23C6N
Intel
10AX016C4U19I3SG
Intel
5SGSED6K2F40C2N
Intel
5CGXFC7B6M15I7N
Intel
EP4SGX530KH40C3NES
Intel
5SGXEA5K1F35I2N
Intel
XC6VLX365T-1FF1156I
Xilinx Inc.
LCMXO2-7000HE-6BG332C
Lattice Semiconductor Corporation