Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPI12CN10N G
Herstellerteilenummer | IPI12CN10N G |
---|---|
Zukünftige Teilenummer | FT-IPI12CN10N G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPI12CN10N G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 67A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 12.9 mOhm @ 67A, 10V |
Vgs (th) (Max) @ Id | 4V @ 83µA |
Gateladung (Qg) (Max) @ Vgs | 65nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4320pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | 125W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO262-3 |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPI12CN10N G Gewicht | kontaktiere uns |
Ersatzteilnummer | IPI12CN10N G-FT |
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