Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SPW20N60S5FKSA1
Herstellerteilenummer | SPW20N60S5FKSA1 |
---|---|
Zukünftige Teilenummer | FT-SPW20N60S5FKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ |
SPW20N60S5FKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 20A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 13A, 10V |
Vgs (th) (Max) @ Id | 5.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 103nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 3000pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 208W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO247-3 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SPW20N60S5FKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | SPW20N60S5FKSA1-FT |
IPD80R750P7ATMA1
Infineon Technologies
IPDD60R050G7XTMA1
Infineon Technologies
IPDD60R150G7XTMA1
Infineon Technologies
IPDD60R080G7XTMA1
Infineon Technologies
IPDD60R102G7XTMA1
Infineon Technologies
IPDD60R125G7XTMA1
Infineon Technologies
IPDD60R190G7XTMA1
Infineon Technologies
IPT60R028G7XTMA1
Infineon Technologies
IPT60R050G7XTMA1
Infineon Technologies
IPT60R080G7XTMA1
Infineon Technologies
EP20K100ETC144-1N
Intel
LFXP3C-3T100I
Lattice Semiconductor Corporation
XC2S100-5PQ208I
Xilinx Inc.
A3PE600-PQG208
Microsemi Corporation
10AX027E4F29I3SG
Intel
5SEE9H40C2LN
Intel
A40MX04-PL84I
Microsemi Corporation
ICE40UL1K-CM36AITR
Lattice Semiconductor Corporation
LFXP15C-3FN256I
Lattice Semiconductor Corporation
LFE3-95EA-6LFN672C
Lattice Semiconductor Corporation