Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPW60R070P6XKSA1
Herstellerteilenummer | IPW60R070P6XKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPW60R070P6XKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ P6 |
IPW60R070P6XKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 53.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 20.6A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 1.72mA |
Gateladung (Qg) (Max) @ Vgs | 100nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4750pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 391W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO247-3 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPW60R070P6XKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPW60R070P6XKSA1-FT |
IPI16CNE8N G
Infineon Technologies
IPI180N10N3GXKSA1
Infineon Technologies
IPI200N15N3 G
Infineon Technologies
IPI200N25N3GAKSA1
Infineon Technologies
IPI22N03S4L15AKSA1
Infineon Technologies
IPI25N06S3-25
Infineon Technologies
IPI25N06S3L-22
Infineon Technologies
IPI26CN10N G
Infineon Technologies
IPI26CNE8N G
Infineon Technologies
IPI320N20N3GAKSA1
Infineon Technologies
A3P015-1QNG68
Microsemi Corporation
5SGXMA7N1F40C2N
Intel
5SGXEA7N1F45I2N
Intel
5SGXMB5R1F43C1N
Intel
EP4CGX15BF14I7N
Intel
XC6VLX195T-1FFG784I
Xilinx Inc.
XC2VP7-6FF672I
Xilinx Inc.
LFE3-150EA-6FN1156I
Lattice Semiconductor Corporation
LCMXO2-4000HC-4FG484I
Lattice Semiconductor Corporation
EP4SGX70HF35I3N
Intel