Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPW65R080CFDAFKSA1
Herstellerteilenummer | IPW65R080CFDAFKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPW65R080CFDAFKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, CoolMOS™ |
IPW65R080CFDAFKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 43.3A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 17.6A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 1.76mA |
Gateladung (Qg) (Max) @ Vgs | 161nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4440pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 391W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO247-3 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPW65R080CFDAFKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPW65R080CFDAFKSA1-FT |
IPI120N04S401AKSA1
Infineon Technologies
IPI120N04S402AKSA1
Infineon Technologies
IPI126N10N3 G
Infineon Technologies
IPI12CN10N G
Infineon Technologies
IPI12CNE8N G
Infineon Technologies
IPI139N08N3GHKSA1
Infineon Technologies
IPI147N12N3GAKSA1
Infineon Technologies
IPI14N03LA
Infineon Technologies
IPI16CN10N G
Infineon Technologies
IPI16CNE8N G
Infineon Technologies
AT40K05AL-1BQC
Microchip Technology
XC3S200AN-4FTG256I
Xilinx Inc.
A54SX32A-1FG144
Microsemi Corporation
EPF6010ATI100-2N
Intel
5SGXEABK3H40I4N
Intel
XC4005-5PC84C
Xilinx Inc.
XA7S25-1CSGA225Q
Xilinx Inc.
A42MX24-1PQG160M
Microsemi Corporation
LFE2-20SE-7FN672C
Lattice Semiconductor Corporation
EP1S20F780C6
Intel