Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRF5803D2PBF
Herstellerteilenummer | IRF5803D2PBF |
---|---|
Zukünftige Teilenummer | FT-IRF5803D2PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | FETKY™ |
IRF5803D2PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.4A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 112 mOhm @ 3.4A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 37nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1110pF @ 25V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 2W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-SO |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF5803D2PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF5803D2PBF-FT |
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