Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRF7526D1PBF
Herstellerteilenummer | IRF7526D1PBF |
---|---|
Zukünftige Teilenummer | FT-IRF7526D1PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | FETKY™ |
IRF7526D1PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.2A, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 180pF @ 25V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 1.25W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | Micro8™ |
Paket / fall | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF7526D1PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF7526D1PBF-FT |
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