Herstellerteilenummer | IRFD014 |
---|---|
Zukünftige Teilenummer | FT-IRFD014 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRFD014 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.7A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 310pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.3W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Paket / fall | 4-DIP (0.300", 7.62mm) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFD014 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFD014-FT |
TK7A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK7A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK7A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK8A45D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK8A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK8A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK8A50DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK8A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK8A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK9A45D(STA4,Q,M)
Toshiba Semiconductor and Storage
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel