Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK7A55D(STA4,Q,M)
Herstellerteilenummer | TK7A55D(STA4,Q,M) |
---|---|
Zukünftige Teilenummer | FT-TK7A55D(STA4,Q,M) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | π-MOSVII |
TK7A55D(STA4,Q,M) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 550V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 7A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.25 Ohm @ 3.5A, 10V |
Vgs (th) (Max) @ Id | 4.4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 16nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 700pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 35W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220SIS |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK7A55D(STA4,Q,M) Gewicht | kontaktiere uns |
Ersatzteilnummer | TK7A55D(STA4,Q,M)-FT |
TK4R3E06PL,S1X
Toshiba Semiconductor and Storage
TK32E12N1,S1X
Toshiba Semiconductor and Storage
TK3R1E04PL,S1X
Toshiba Semiconductor and Storage
TK14E65W5,S1X
Toshiba Semiconductor and Storage
TK100E10N1,S1X
Toshiba Semiconductor and Storage
TK100E06N1,S1X
Toshiba Semiconductor and Storage
TK100E08N1,S1X
Toshiba Semiconductor and Storage
TK40E06N1,S1X
Toshiba Semiconductor and Storage
TK34E10N1,S1X
Toshiba Semiconductor and Storage
TK22E10N1,S1X
Toshiba Semiconductor and Storage