Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFD224PBF
Herstellerteilenummer | IRFD224PBF |
---|---|
Zukünftige Teilenummer | FT-IRFD224PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRFD224PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 250V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 630mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 380mA, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 14nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 260pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Paket / fall | 4-DIP (0.300", 7.62mm) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFD224PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFD224PBF-FT |
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