Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFI744G
Herstellerteilenummer | IRFI744G |
---|---|
Zukünftige Teilenummer | FT-IRFI744G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRFI744G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 450V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 630 mOhm @ 2.9A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1400pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 40W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 Full Pack, Isolated Tab |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFI744G Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFI744G-FT |
TK20A60W5,S5VX
Toshiba Semiconductor and Storage
2SJ304(F)
Toshiba Semiconductor and Storage
2SJ380(F)
Toshiba Semiconductor and Storage
2SJ438(AISIN,A,Q)
Toshiba Semiconductor and Storage
2SJ438(AISIN,Q,M)
Toshiba Semiconductor and Storage
2SJ438(CANO,A,Q)
Toshiba Semiconductor and Storage
2SJ438(CANO,Q,M)
Toshiba Semiconductor and Storage
2SJ438,MDKQ(J
Toshiba Semiconductor and Storage
2SJ438,MDKQ(M
Toshiba Semiconductor and Storage
2SJ438,Q(J
Toshiba Semiconductor and Storage
A54SX32A-TQG176M
Microsemi Corporation
M1AFS250-FG256
Microsemi Corporation
APA600-FG676I
Microsemi Corporation
5SGSMD6K1F40C2LN
Intel
EP4SE360H29I3
Intel
5SGXEA7N3F45C2LN
Intel
LFXP2-30E-6FT256I
Lattice Semiconductor Corporation
EP2AGX45DF29I3
Intel
EPF10K10LC84-4N
Intel
EP4SGX360HF35I4
Intel