Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFR12N25DCTRLP
Herstellerteilenummer | IRFR12N25DCTRLP |
---|---|
Zukünftige Teilenummer | FT-IRFR12N25DCTRLP |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRFR12N25DCTRLP Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 250V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 14A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 8.4A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 810pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 144W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-Pak |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFR12N25DCTRLP Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFR12N25DCTRLP-FT |
GP1M007A065CG
Global Power Technologies Group
GP1M008A025CG
Global Power Technologies Group
GP1M008A050CG
Global Power Technologies Group
GP1M009A020CG
Global Power Technologies Group
GP1M016A025CG
Global Power Technologies Group
GP1M018A020CG
Global Power Technologies Group
GP2M002A060CG
Global Power Technologies Group
GP2M002A065CG
Global Power Technologies Group
GP2M004A060CG
Global Power Technologies Group
GP2M004A065CG
Global Power Technologies Group
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